Abstract
The reaction Ag Cd → Ag i + V Cd was used to create cadmium vacancies V Cd in the space charge region of a Schottky contact on p-type CdTe. At T = 380 K, the Ag i + ions were drifted out of the space charge region by the high electric field under reverse bias condition. After cooling down to 80 K with applied reverse bias, admittance spectroscopy measurements were performed. Only after this reverse bias annealing, an additional defect with a thermal activation energy of E v + 0.23(3) eV is observed. In other samples, the existence of V Cd after silver diffusion was monitored by perturbed angular correlation spectroscopy (PAC). Here, admittance spectroscopy reveals the same activation energy of the electrically dominating defects as given above. This result supports the assignment of this level to cadmium vacancy acceptors.
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