Abstract
Reverse bias annealing (RBA) experiments on high quality Schottky diodes formed on both hydrogenated amorphous silicon (a-Si:H) and hydrogenated polymorphous silicon (pm-Si:H) are presented. A strong increase of the deep defect density after RBA is revealed by capacitance measurements. The spatial location of created defects is shown to be limited within the space charge region established by the reverse bias applied during annealing. Changes are metastable and the structure can recover after annealing under short circuit. It is shown that pm-Si:H has a much lower deep defect density and is more robust against defect creation than a-Si:H. Results are discussed in terms of possible mechanisms for defect creation related to the microstructure of the materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.