Abstract
The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared.
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