Abstract
AbstractWe use high pressure techniques to investigate the properties of two classes of “dilute‐nitride‐phosphide”‐based devices; GaNP/GaP light emitting diodes for yellow–amber–red display applications and GaNAsP/GaP lasers, a potential route to producing lasers monolithically on silicon. Based upon high pressure electroluminescence measurements we find that the band anti‐crossing (BAC) model reasonably describes the GaN(As)P system based on an average of the nitrogen states. In terms of device characteristics, we find that carrier leakage into the X‐minima of GaP reduces the efficiency of GaNP/ GaP LEDs with increasing pressure. Lasing has been observed in GaNAsP/GaP devices with a pulsed threshold current density of 2.5 kA/cm2 at 80 K (λ = 890 nm). A weak increase in threshold current with hydrostatic pressure indicates that a carrier leakage path that does not involve the GaP X ‐minima is the dominant carrier recombination mechanism in these devices, in contrast to the LEDs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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