Background deep-level defects in VPE GaP

Abstract

Residual deep-level defects in vapor-phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at Ec−0.44 eV and was present in concentrations of (0.1–1.6) ×1014 cm−3. Two other traps were observed at the epitaxial-layer–substrate interface with energies of Ec−0.23 eV and Ev+0.51 eV. The capture cross section and concentration of these defects are also presented.