Deep level defects in polycrystalline cadmium sulfide

Abstract

Properties of deep level defects in polycrystalline CdS junctions were investigated using transient capacitance spectroscopy. A total of seven electron traps and one hole trap was observed with activation energies of 0.16, 0.31, 0.38, 0.42, 0.53, 0.69, 0.96, and 0.32 eV, respectively. The emission rate, capture cross section and concentration of the traps are presented. The temperature dependence of the capture cross section for the electron traps at 0.53 and 0.69 eV are also given.