Abstract
In this study, microwave ceramic Ba2Ti9O20 thick films were successfully fabricated by aerosol deposition (AD) with carrier gases of oxygen and argon. Ba2Ti9O20 films with uniform thicknesses of 6 µm were obtained. The grain sizes of the films were ≈0.2 µm, which were much smaller than those of the starting Ba2Ti9O20 powders (≈1.3 µm), because the particles fractured to smaller fragments and deformed to fill the gaps between the deposited particles during impact with the substrate. The dielectric constant and dielectric loss of the Ba2Ti9O20 film prepared in argon (41 and 0.043, respectively) were larger than those of the Ba2Ti9O20 film prepared in oxygen (32.5 and 0.036, respectively), which was largely due to the formation of oxygen vacancies. The Ba2Ti9O20 films prepared remained fairly stable with respect to voltage and temperature variations.
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