AZZURRO provides GaN-on-Si wafers for 1kV device

Abstract

Last year in August, AZZURRO Semicon ductors came out of stealth mode and stirred considerable interest in the compound community, when CTO Dr Armin Dadgar gave a presentation on the epi-wafer foundry's successful growth of thick, crack-free 150mm GaN on Si-substrates at the ICNS conference in Bremen. Now the company is on the eve of being able to take the credit for its epi-wafers having broken the barrier to GaN-on-Si devices, achieving more than 1kV breakdown voltage. These devices have been created for an industry customer by MicroGaN of Ulm.