Abstract
This article reports on a high transparency aluminum-doped zinc oxide (AZO)-gated Al 0.2 Ga 0.8 As/In 0.2 Ga 0.8 As high electron mobility transistor. The present device has demonstrated an improved intrinsic voltage gain (A v ) of 257 and a superior two-terminal gate-drain breakdown (turn-on) voltages of -63 (3.4) V at 300 K compared to a conventional Au-gated device with the same gate dimensions of 1 × 100 μm. The AZO gate shows a high transmittance of 88-98% for the wavelengths of 400-900 nm. Optical sensing characteristics and accurate on-device photoluminescence probing are also investigated.
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