Abstract
Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose of this study is to produce and optimize properties of Aluminum doped Zinc Oxide (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface of silicon Heterojunction Solar Cells (HJSCs) and High Electron Mobility Transistor (HEMT) applications. This study is focused on the effect of the deposition temperature and aluminum atomic concentration on structural, electrical and optical properties of ALD grown AZO ohmic contact films. The results show that as-deposited films have 80-90% transmittance in the visible spectra, low resistance (2.04x10-3 ohm.cm) and mobility value of 5.25 cm2/V.s.
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