Abstract
Numerical analysis has been performed on the effect of the carrier dispersion caused by avalanching on the small signal admittance and the transient step response in the avalanche region of an idealized IMPATT diode having a uniform electric field profile. The degree of dispersion, referred to hereafter as Avalanche Induced Dispersion (AID), depends on the relative magnitudes of ionization rates of the two carriers. AID becomes largest when the two ionization rates are equal and decreases with increasing discrepancy between them. It is found that the build-up of an avalanche can be faster if either electrons or holes are strongly ionizing than when both of them ionize equally. Also, the small signal negative conductance is minimum when the dispersion is most pronounced. Since the time delay in the avalanche build-up depends strongly on AID, the upper limit of the high-frequency performance of IMPATT diodes can be estimated from the theoretical value of AID.
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