Abstract
Due to its superiority, regarding the velocity-field characteristic, the performance of n-type InP IMPATT diodes has been extensively studied. On the other hand, the performance of the p-type IMPATT diodes is not sufficiently studied. The investigation of p-type IMPATT diodes is necessary for the design and optimization of low-high-low InP IMPATT diodes and for the optimum design of the microwave circuit where the IMPATT diode is embedded. This paper presents the results of a detailed computational study of p-type InP IMPATT diodes. These results are obtained using our computer simulation program that takes fully into account the non-linearities and all the physical effects pertinent to the IMPATT diode operation. Some important conclusions concerning the effect of the peak value of the microwave signal on the operation and performance of IMPATT diodes are drawn out.
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