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Abstract
The ionization rates of charge carriers and effective ionization rate were measured for field lower than 2.5×105 volts/cm by using high voltage pin junctions. The effective ionization rate is experimentally given by α=1.0×106exp (-1.66×106/E). The experimental ionization rates of electrons and holes, αn and αp, are just extended to the low field side of the previous experimental data and the dependence on the field is given by αnp≈anpexp (-bn,p/E) over the range of field (1.1–5.0)×105 volts/cm, but this formula does not sufficiently agree with Baraff's theory. For these junctions, the effective ionization rate is expressed by α≈(αn–αp)/ln (αn/αp). This approximation can be also extended to pn junctions. For some samples, anomalous multiplication characteristics were observed. They are closely related with diffusion process.
Published Version
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