Abstract
Auger recombination (AR) in quantum well (QW) semiconductors is re-investigated taking into account a realistic band structure instead of the usual parabolic approximation. Since direct AR is negligible in QWS phonon-assisted AR is treated. The theoretical results are in good agreement with experimental investigations. In contrast, the description of QWS by a reduced heavy-hole mass is insufficient. The influence of AR on the temperature dependence of semiconductor lasers is discussed.
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