Abstract
Calculations are presented for the rate of Auger recombination in a semiconductor quantum well wire. An expression is given for the rate of the CHSH Auger process in which the carriers remain in their ground subbands, and the rates of other processes such as CHCC may be obtained by simple algebraic substitution. Numerical calculations that consider all possible bound-to-bound intra- and inter-subband transitions are reported. Results are given for the rate of the CHCC process as a function of wire width and wire axis direction for an InGaAsP/InP quantum well wire.
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