Atomic-layer epitaxy by a flux-interruption and annealing method and the analysis of reflection high-energy electron diffraction oscillation overshoot in the molecular-beam epitaxy growth of GaAs

Abstract

Atomic-layer epitaxy is relatively rare in molecular-beam epitaxy (MBE). This is because the precise control of atomic layer deposition is difficult. Shutter mechanical delay and signal transit delay times are main reasons for the difficulty of precise control. A flux-interruption and annealing method has been used to grow atomic-layer epitaxy by MBE. Exact shutter action has been achieved to avoid an excess fractional layer and keep the reflection high-energy electron diffraction (RHEED) oscillation indefinitely. The RHEED oscillation profile, including the overshoot, has been studied as a function of substrate temperature and excess deposition of As4.