Abstract
Crystal phase defined heterostructures, or polytype heterostructures, are atomically sharp with no intermixing, which makes them ideal contenders for a wide range of applications. Although polytype quantum dots have shown promising results as single photon sources, a high degree of control on the dimensions and the number of polytype quantum dots is necessary before any application can be developed. In this work, we show results from optical characterization of highly controlled wurtzite (wz)–zinc blende (zb) GaAs quantum dots with sharp photoluminescence signal and a strong indication of 0D density of states. One band effective mass calculations show good agreement with the measured data. Radially confined nanowires with a single wz–zb GaAs interface also show sharp photoluminescence signal and 0D density of states. This indicates the existence of quantum dot like states in triangular wells formed at the wz–zb GaAs interface. These results show the potential of polytype quantum dots for physics and optics applications.
Highlights
Based semiconductor nanowires, scientists have been able to create a new type of semiconductor interface: the polytype interface
Confined nanowires with a single wz–zb gallium arsenide (GaAs) interface show sharp photoluminescence signal and 0D density of states. This indicates the existence of quantum dot like states in triangular wells formed at the wz–zb GaAs interface. These results show the potential of polytype quantum dots for physics and optics applications
We demonstrate that it is possible to controllably fabricate individual polytype quantum dots in GaAs nanowires that have full 3D-confinement. We show that these dots have a sharp density of states (DOS) using photoluminescence spectroscopy (PL) and photoluminescence excitation spectroscopy (PLE)
Summary
Based semiconductor nanowires, scientists have been able to create a new type of semiconductor interface: the polytype interface. Confined nanowires with a single wz–zb GaAs interface show sharp photoluminescence signal and 0D density of states. These single interfaces show similar Q-dot-like behavior, indicating the existence of 0D-DOS in the triangular wells at the wz–zb GaAs interface in these radially confined nanowires.
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