Abstract

We have grown GaAs quantum dots (QDs) in Al<sub>0.3</sub>Ga<sub>0.7</sub>As matrix by droplet epitaxy for application in single photon sources. This growth method enables the formation of QDs without strain, with emission wavelengths of around 700 nm within the optimal detection range of cost effective silicon detector, and with reduced surface density of several tens to a few QDs per &mu;m<sup>2</sup> for easier isolation of single QDs. The optical properties of QDs were envisaged by exciton and biexciton emission peaks identified from power dependent and time-resolved micro-photoluminescence (&mu;-PL) measurements. The possibility of fabricating photonic crystal (PC) resonator including a single QD was shown by obtaining precise spectral and spatial information from a few QDs in a mesa structure, utilizing cathodoluminescence (CL) measurements.

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