Abstract
Memristive devices, with a fusion of memory and logic functions, provide good opportunities for configuring new concepts computing. However, progress towards paradigm evolution has been delayed due to the limited understanding of the underlying operating mechanism. The stochastic nature and fast growth of localized conductive filament bring difficulties to capture the detailed information on its growth kinetics. In this work, refined programming scheme with real-time current regulation was proposed to study the detailed information on the filament growth. By such, discrete tunneling and quantized conduction were observed. The filament was found to grow with a unit length, matching with the hopping conduction of Cu ions between interstitial sites of HfO2 lattice. The physical nature of the formed filament was characterized by high resolution transmission electron microscopy. Copper rich conical filament with decreasing concentration from center to edge was identified. Based on these results, a clear picture of filament growth from atomic view could be drawn to account for the resistance modulation of oxide electrolyte based electrochemical memristive elements.
Highlights
VS swept from 0 ~ 1.3 V and VG constantly biased at 1.5 V. (b) The I-V curve of the RESET process with VD sweeping. (c) The SET curve for the varied VG programing scheme
VS is constantly biased with a voltage of 2 V and VG varies from 0 V to 1.5 V with an increasing rate of 0.005 V per step. (d) The IDS dependence of VG in the RESET process, with VD kept at 2 V and VS at ground
We investigated the switching behavior of a Cu/(4 nm)HfO2/Pt memristive device in a one transistor/one resistor (1T1R) structure, which is a basic unit of storage in practical application
Summary
Real-Time Regulation of Current with Varied Gate Voltage. Digging the growth kinetics of filament is always of research interest. This tunneling system had three components (the filament tip, tunnel gap and counter electrode) and three key parameters (the tip size, barrier height and barrier width). Based on direct tunneling conduction, the filament was found to increase with a length of unit feature, matching with the hopping conduction mechanism of Cu ions between the interstitial sites of HfO2 lattice. This work provides a comprehensive understanding of the resistance change of oxide electrolyte based electrochemical memristive elements
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