Abstract
The growth and rupture of conductive filaments act a crucial part in the reliability of resistive switching behaviors. The random growth and rupture of conductive filaments are the primary reason for the instability of set/reset reproducibility. Hence, we propose a method that embedded carbon quantum dots (CQDs) in polymethylmethacrylate (PMMA) to fabricate the Ag/PMMA&CQDs/FTO resistive switching device. Five different concentrations of CQDs are embedded in PMMA to regulate the resistive switching properties, and the resistive memory characteristics of the optimal group are systematically studied. The optimal group exhibits excellent switching repeatability, low set/reset voltages, and stable forming voltage, which is much better than PMMA without CQDs. Furthermore, we employ the COMSOL software to build a simulation model for exploring the influence of CQDs on the internal electric field of PMMA, which proved that the introduction of CQDs might have a favorable effect on the orderly growth of conductive filaments.
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