Abstract
Atomically resolved and well-ordered field ion images of several silicon surfaces have been obtained. For a carefully cleaned Si tip, after annealing at 800 °C for several minutes, very well-ordered atomic structures develop on high index planes such as the (230), (135), (124), (234), (123), (113), (115), and (317). Many of them are reconstructed. Two structures coexist for the (230) plane. Also, many two-dimensional defects can be seen.
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