Abstract
ABSTRACTAtomically resolved and well ordered field ion images of silicon surfaces have been obtained for the first time when a carefully cleaned Si tip is annealed to 700 to 800°C for several minutes. Well ordered atomic structures develop on high index planes such as the (130), (135), (124), (234), (123), (113), (115) and (320). Some of them develop the (1×1) structure while others are reconstructed. Two structures coexist for the (130) plane. Twodimensional defects can be seen and their density is surprisingly high. We have also studied formation of thin layers of silicide on silicon surfaces.
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