Atomic-scale observation and prediction of gallium ion implantation induced amorphization on natural diamond surface

Abstract

Gallium ion implantation is an important solution to modify the physical properties of diamonds, in which the critical condition of gallium ion implantation-induced amorphization of diamond has a crucial influence on the modification effect. Therefore, this work attempts to establish an analytical prediction model of the critical implantation dose for diamond amorphization considering the acceleration voltage, implantation angle and crystal orientation. The prediction accuracy of the model is validated with the electron backscatter diffraction pattern technology. The results show that the model has a satisfactory prediction accuracy when the acceleration voltage is higher. Moreover, the atomic-scale observation of gallium ion implantation-induced amorphization of natural diamonds is realized on a spherical aberration projection electron microscope. The results presented in this work are significant to modify the natural diamond tool for service life improvement with focused ion beams in the future as well as to guide doping diamonds to manufacture n-type semiconductor diamonds.