Abstract
Repair of photomasks by sputter removal of chrome and other opaque materials with a focused ion beam (FIB) of gallium results in the implantation of gallium and chrome ions into the quartz substrate. The effect is localized transmission loss in the regions where material was removed. Currently, these gallium and chrome `stains' are removed using blanket etching techniques of the complete quartz substrate, thereby restoring the transmission losses. However, these techniques are unacceptable for use with phase shift masks (PSMs). This paper describes a technique that was developed to restore the localized transmission losses to acceptable levels in situ at the FIB repair system. In particular, the development of a technique that restores transmission for i-line lithography phase shift masks for 0.50 micrometers and 0.35 micrometers technology requirements is described. Information is presented describing various applications of the process including etched glass and embedded shifter type phase shift photomasks.
Published Version
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