Altering the luminescence properties of self-assembled quantum dots in GaAs by focused ion beam implantation

Abstract

Using quantum dots (QDs) as single-photon sources draws the attention in many quantum communication technologies. One pathway towards manufacturing single-photon sources is focused ion beam (FIB) implantation in molecular beam epitaxy-grown QD samples to disable all QDs around an intentional one for single photoluminescence (PL) emission. In this paper, we investigate the lattice disorders in the vicinity of InAs/GaAs QDs introduced by FIB implantation of gallium and indium ions. For high fluences, we achieve total elimination of the QDs photoluminescence. The impact of the different ion species and fluences is studied by low-temperature PL measurements. Furthermore, we deduce a simple model based on the trap-assisted recombination for the description of the degradation of the PL emission. It allows the determination of the fluences at which the PL emission is suppressed. Moreover, we identify the implantation-induced non-radiative defects by temperature-dependent PL measurements.