Abstract
Transmission electron microscopy studies of GaAs1−xBix layers grown at low temperature by molecular beam epitaxy have revealed evidence of both atomic ordering and phase separation. In layers containing up to ∼10% Bi, the two variants of CuPtB-type atomic ordering on {111}B planes were observed and this is believed to be associated with the surface reconstruction present during growth. In a sample containing ∼13% Bi, no atomic ordering was observed but instead an anisotropic platelike structure was present that is believed to result from phase separation, possibly associated with the surface segregation of excess Bi during growth. Both of these effects are expected to have significant effects on the electrical and optical properties of the material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.