Abstract
This report highlights the advances in the understanding of phase separation and atomic ordering in mixed III-V layers. Specifically, the following issues were addressed in the grant period (August 1987 to February 1992): (1) bulk vs surface phase separation; (2) influence of growth technique on phase separation; (3) origin of coarse contrast modulations; (4) influence of dopant diffusion on phase separated microstructures; (5) influence of annealing on carrier mobility in InGaAsP layers; (6) co-existence of CuPt-type ordering and phase separation; (7) influence of growth conditions on ordering; (8) influence of surface reconstruction on atomic ordering.
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