Abstract
The self-limiting growth in atomic layer epitaxy (ALE) of ZnS on (100)-GaAs substrate was investigated using a horizontal low-pressure metalorganic chemical vapor deposition (MOCVD) system. The growth rate per cycle was kept constant at one monolayer, independent of the substrate temperature which was in the range of 125° C to 200° C. Under optimal growth conditions, ZnS layers grown in the ALE mode showed good surface morphology. Photoluminescence (PL) showed three peaks; a near-band-edge emission at 349 nm, a self-activated emission at 434 nm and a broad one at around 500 and 600 nm, which is considered to be due to relaxation through dislocation formation.
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