Abstract
High-quality nitrogen-doped ZnSe (ZnSe:N) epitaxial layers were grown on ZnSe substrates in a low-pressure metalorganic chemical vapor deposition (MOCVD) system under optimum growth conditions using hydrogen as a carrier gas and ammonia as a dopant source. In order to enhance the activation efficiency of nitrogen in ZnSe epitaxial layers, ZnSe:N/ZnSe was annealed in melted zinc using the rapid thermal annealing technique. The dependence of net acceptor concentration on annealing duration, VI/II flux ratio, and ammonia flux was examined. The highest net acceptor concentration value calculated from capacitance–voltage (C–V) measurements reached 2×1017 cm-3. This is the highest value obtained so far for ZnSe homosystem epitaxial layers grown by the MOCVD method.
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