Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

L.-M Kern,F Bouamrane,O Bezencenet,F Godel,F Petroff,M Galbiati,R Galceran,M.-B Martin,P Brus,V Zatko,E Gaufrès,B Dlubak,P Seneor,D Perconte,A Loiseau,B Servet

doi:10.1063/1.5086840

Abstract

We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices.

Highlights

In this letter, we present a simple process which provides both a passivation barrier for the black phosphorus (BP) spin transport channel and a tunnel barrier required for spin injection
We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration
We present a simple process which provides both a passivation barrier for the BP spin transport channel and a tunnel barrier required for spin injection

Summary

Introduction

We present a simple process which provides both a passivation barrier for the BP spin transport channel and a tunnel barrier required for spin injection. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices.

Results

Conclusion