Abstract
Transistors were fabricated based on mechanical exfoliated few layer black phosphorus (BP) flakes, and performance change of these devices exposed to air was explored systematically. BP devices were found to suffer severe performance degradation in ambient conditions, and the field effect mobility drops to less than 1/10 of the original in no more than 120 hours after fabrication. However the current on/off ratio shows completely different time dependent behavior to the published result, i.e. increases with exposure time in air, since the minimum current decreases with exposure time to air, which is probably originated from the decrease of layer number in BP. A model is developed to estimate the bandgap change of BP according to the time dependent minimum current of the BP device.
Highlights
Thickness of the black phosphorus (BP) used was measured by atomic force microscopy (AFM) before devices fabrication
The BP devices were measured as a typical field-effect transistor (FET) through using heavily doped silicon substrate as the back gate, and the measured results of a typical BP field-effect transistors (FETs) are shown in Fig. 1(c) and 1(d)
Performance change of BP FETs exposed to air was investigated in detail and systematically
Summary
Xiaomeng Ma,[1] Wanglin Lu,[2] Bingyan Chen,[1] Donglai Zhong,[1] Le Huang,[1] Lijun Dong,[1] Chuanhong Jin,[2] and Zhiyong Zhang1,a 1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China 2State Key Laboratory of Silicon Materials and School of Materials Science &Engineering, Zhejiang University, Hangzhou 310027, China (Received 28 July 2015; accepted 1 October 2015; published online 8 October 2015).
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