Abstract
Iron films were deposited onto the Si (100) substrates by DC-magnetron sputtering and subsequently annealed in the temperature range of 873 K to 1273 K for 2 hours. Rutherford backscattering analysis was performed to determine the elemental depth profiles and the oxidation process in samples. The silicides formation was characterized by X-ray diffraction. The results indicate that annealing at 873 K causes only a small mixing of the Fe and Si atoms near the Fe/Si interface, while the 973 K annealing enhances the atomic diffusion and yields to a graded concentration distribution of Fe and Si. The metal-rich silicides Fe1+xSi (0≤x≤2) start to nucleate and grow at 973 K and only α- FeSi2 formation is conduced after annealing at 1273 K for 2 hours.
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