Abstract
Cu thin films are deposited on p-type Si (100) substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO2/Si (100) systems are studied by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results can be obtained. The onset temperature of interdiffusion for Cu/SiO2/Si(100) is 350 °C. With the annealing temperature increasing, the interdiffusion becomes more apparent. The calculated diffusion activation energy is about 0.91 eV. For the CU/SiO2/Si (100) systems copper silicides are not formed below an annealing temperature of 350 °C. The formation of the copper silicides phase is observed when the annealing temperature arrives at 450 °C.
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