Abstract
Implantation of 57 Fe into Si has been investigated with two different techniques both utilizing Mößbauer Spectroscopy which measures local electron densities, electric and magnetic fields: Single Coulomb excited 57 Fe atoms in Si have been studied via Time Differential In Beam Mößbauer Spectroscopy . ∼30% of the implanted Fe come to rest at interstitial sites. The first microscopic observation of long range diffusion of these interstitial Fe atoms in Si is reported. Indications for a direct observation of a fast annealing process at the end of the nuclear track have been found. Unique features of the technique like the low implantation dose needed (≤10 12 cm -2 ) are described. The development of new materials via high dose ion implantation has been investigated by Conversion Electron Mößbauer Spectroscopy . Spontaneous formation of crystalline Fe-Si phases for an implantation dose of up to 10 18 cm -2 Fe in Si single crystal has been observed. Mößbauer Spectroscopy, X-Ray-Diffraction(XRD) and Rutherford Backscattering Spectroscopy have been applied to characterize the samples.
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Schedule a callMore From: International Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements
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