Abstract
Atomic diffusion bonding (ADB) is a wafer bonding process using thin films. After ADB in air using oxide films was demonstrated, the resultant bonding performance was compared to that obtained ADB in vacuum with the oxide films. Great bonding strength can be obtained at room temperature using ADB in vacuum, whereas ADB in air required post-bonding annealing at temperature above 150 °C to achieve surface free energy at the bonded interface greater than 1 J/m2. However, ADB in air is a convenient process compared to that in vacuum. For ADB in air using oxide films, we demonstrated that very thin metal films oxidized in air can also be used as oxide films. Particularly, by using amorphous Si films, bonded wafers with a bonded interface consisting of SiO2 amorphous layer can be realized with post-bonding annealing at 150 °C.
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