Atomic Diffusion Bonding in Air Using Oxide Films

Abstract

Atomic diffusion bonding (ADB) of wafers is a promising process to achieve room-temperature wafer bonding [1]. For ADB processing, thin films are fabricated on two flat wafer surfaces using sputter deposition, with subsequent bonding of the two films on the wafers in vacuum. In addition to thin metal films [1], both oxide [2] and nitride [3] thin films are useful for bonding.For this study, after demonstrating ADB “in air” using oxide films, we compared the resultant bonding performance to that obtained using ADB “in vacuum” with the oxide films. Table 1 presents the surface free energy values at the bonded interface γ for quartz glass wafers bonded using 5-nm-thick Y2O3 film on each side. Using ADB in vacuum, great bonding strength was achieved for as-bonded wafers: the blade could not be inserted between the wafers. Using ADB in air, γ for as-bonded wafers was small, only 0.25 J/m2, but low-temperature annealing at 150 °C enhanced γ to 1.6 J/m2. At 200 °C, γ becomes greater than 2 J/m2. The annealing was conducted in air using a hot plate. Figure 2 portrays STEM cross-section images of Y2O3(5 nm)/Y2O3(5 nm) films (A) bonded in vacuum (as-bonded) and (B) bonded in air (annealed at 150 °C). The bonded interface is not visible in image (A). However, a slightly low-density bonded interface is partially visible in image (B). The difference of the bonded interface structure is consistent with that of γ presented in Table 1.Various oxide films such as TiO2, ITO, SiO2, and WO3 are useful for ADB in air, as is true also for ADB in vacuum, although post-bonded annealing at a low temperature of 150 °C is necessary for ADB in air to achieve γ greater than 1 J/m2. The bonding process of ADB in air is more convenient to execute than that in vacuum. Moreover, any mirror-polished wafer can be bonded using ADB in air, as is true also using ADB in vacuum. It is likely that H2O gas in air can adsorb on the fresh surface of oxide films efficiently and that well-hydrophilic films surfaces can be obtained easily when the deposited oxide films are removed from the vacuum chambers; in fact, low-temperature annealing at 150 °C enhanced γ remarkably. ADB in air using oxide films is useful for some applications if post-bonded annealing at low temperatures is acceptable for bonding processes. T. Shimatsu and M. Uomoto, ECS Trans., 33 (4), 61 (2010).T. Shimatsu, H. Yoshida, M. Uomoto, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, and K. Miyamoto, Proceedings of Seventh LTB-3D 2021. p.51 (2021).M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, and K. Miyamoto, Proceedings of Seventh LTB-3D 2021. p.45 (2021). Figure 1