Abstract
AbstractAtmospheric‐pressure plasma atomic layer deposition (APP‐ALD) of TiOx at room temperature is reported for the first time. Layer properties of the APP‐ALD‐grown TiOx are compared to those reported for the low‐pressure plasma ALD of TiOx. The contribution of parasitic CVD to the process is discussed. The application of the resulting TiOx layers as electron‐extraction interlayers in inverted organic solar cells (OSCs) is demonstrated. The characteristics of OSCs based on APP‐ALD‐grown TiOx are similar to those of OSCs based on TiOx prepared by low‐pressure thermal ALD or sol‐gel processing. APP‐ALD is intended to harvest the beneficial properties of ALD layers in a high‐throughput atmospheric processing environment.
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