Assessment of Monte Carlo Simulation of Electron Transport in ZnO Diode in Intelligent Information Systems

Mokhles Gerami Adeleh

doi:10.11648/j.ijiis.20190802.11

Abstract

Aim: The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. Method: The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. Result: In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. Conclusion: It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.

Highlights

The ensemble Monte Carlo techniques have been used for well over 30 years as a numerical method to simulate non-equilibrium transport in semiconductor materials and devices and has been the subject of numerous books and reviews [1]
As seen in this figure, the electric field is emitted from the cathode to the anode
This field is published in such a way that, as the orbit closes closer to the anode region, the electric field increases sharply and with the voltage increase the created field in middle zone of diode increases drastically as well

Summary

Introduction

The ensemble Monte Carlo techniques have been used for well over 30 years as a numerical method to simulate non-equilibrium transport in semiconductor materials and devices and has been the subject of numerous books and reviews [1]. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events [2]. Most components in the electronics industry are made in sub-micrometer dimensions. The properties of electron transport in these particles are very different from those of a semiconductor volume or of parts with dimensions larger than micrometer, due to the intense and non-uniform electric field produced along these parts. Various methods are available to study the transport properties of the carriers in electronic components, where one of the most important methods for understanding the physical properties is the Monte Carlo method [7]

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Conclusion