Abstract
The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n<sup>+</sup>nn<sup>+</sup> ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.
Highlights
The ensemble Monte Carlo techniques have been used for well over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices and has been the subject of numerous books and reviews [1]
The conduction band is approximated by nonparabolic multi valley bands, using the dispersion relation [35]
Extensive research is conducted on submicrometer electronic components such as n+nn+ diodes known as ballistic diodes [6]
Summary
The ensemble Monte Carlo techniques have been used for well over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices and has been the subject of numerous books and reviews [1]. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events [2]. Most components in the electronics industry are made in sub-micrometer dimensions. Various methods are available to study the transport properties of the carriers in electronic components, where one of the most important methods for understanding the physical properties is the Monte Carlo method [7]. Pour and et al have studied a lot in Software Implementation for Symmetric Ciphers with Smoothed Power Consumption [8,9,10]
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