Abstract
p-Type ZnO:As films with hole concentration of 10 16–10 17 cm −3 were deposited on glass substrates by cosputtering method with ZnO and Zn 3As 2 targets. Proper annealing may change the conduction type of ZnO:As film. Ohmic contacts were established between Ti electrodes and ZnO films. X-ray photoelectron spectroscopy (XPS) showed that the bonding state of As in ZnO:As film was in its oxidization state. The optical band gap of the ZnO films blueshifted from 3.22 to 3.34 eV in our experiment. Our results not only demonstrated a new approach to obtain p-type ZnO films but also helped to understand the microscopic structure of As in As-doped ZnO.
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