Abstract
We report the preparation of arsenic doped p-type ZnO films using a Zn3As2∕ZnO target by pulsed laser deposition. Zn3As2 was used as a p-type dopant source material for arsenic doping in ZnO. The existence of As in the As-doped ZnO films was confirmed by the x-ray photoelectron spectroscopy study. The p-type behavior of the As-doped ZnO films was determined by the Hall and photoluminescence measurements. Room temperature Hall measurements revealed that the As-doped ZnO films exhibited p-type conductivity after being annealed at 200°C in N2 ambient for 2min with the hole concentrations varied between 2.48×1017 and 1.18×1018cm−3. The resistivity and carrier mobility of the As-doped p-type ZnO films were in the range of 2.2–6.7Ωcm and 0.83–11.4cm2∕Vs, respectively. The low temperature photoluminescence measurements confirmed the peak associated with the neutral-acceptor bound exciton (A0X) emission in the As-doped p-type ZnO films.
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