Abstract
Major limiting factors in the linear scaling down of the shallow source/drain junction are the boron channeling effect and the Si consumption phenomenon during silicidation. We can solve these problems by As preamorphization of the predeposited amorphous Si layer. The predeposited amorphous Si layer made the junction depth decrease to nearly the thickness value of the layer and was effectively utilized as the consumed Si source during Ti silicidation. This method was applied to the actual fabrication of the PMOSFET (p-channel metal oxide semiconductor field effect transistor) through the SES (selectively etched Si) technology.
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