Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition

Abstract

Advantage and role of focused ion beam (FIB) for nanopatterning of the substrates toward the artificial control of self-assembly processes of semiconductor nanostructures are shown and discussed. Two-dimensional ZnO nanodot arrays well-ordered in size and position of the nanodots are demonstrated, for example, the nanodots with diameter of 130±10 and 18±5 nm were two dimensionally arrayed with periods of 750 and 100 nm, respectively. Gallium implanted in the FIB-nanopatterning is suggested as a plausible reason for the selective nucleation of ZnO nanodots on nanopatterned substrates.