Abstract
Epitaxial layers of Ga As are grown by liquid phase epitaxy (LPE). Mobilities up to 8500 cm2 per volt sec at 300°K and 106000 cm2 per volt sec at 77°K are obtained on (100) orientated substrates. Thermal conditions are controlled during epitaxial deposition, specially in order to avoid structural defects and inhomogeneities linked to constitutional supercooling.
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