Abstract
A new technical improvement in understanding the resistive switching characteristics of unipolar resistive random access memory (RRAM) is investigated. It is possible to minimize reset current (IRESET), set voltage variation, and forming voltage (VFORMING), which results in a wide sensing margin and high density applications by using a conducting filament (CF) minimized structure up to a 10 nm technology node. Its structural advantages enable IRESET to be tuned with excellent manufacturability. Numerical simulation is also performed using a random circuit breaker (RCB) model, showing that the proposed structure elucidates the resistive switching improvement.
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