Abstract
Based on a unified physical model and first-principle calculations, a material-oriented methodology has been proposed to control the bipolar switching behavior of an oxide-based resistive random access memory (RRAM) cell. According to the material-oriented methodology, the oxide-based RRAM cell can be designed by material engineering to achieve the required device performance. In this article, a Gd-doped HfO2 RRAM cell with excellent bipolar switching characteristics is developed to meet the requirements of memristive device application. The typical memristive characteristics of the Gd-doped HfO2 RRAM cell are presented, and the mechanism is discussed.
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