Area Selective Atomic Layer Deposition of Cobalt Thin Films

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Area selective atomic layer deposition (ALD) of Co thin films was investigated by using octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a blocking layer. Selective deposition was not observed in Co plasma enhanced ALD (PE-ALD) by CoCp2 and NH3 plasma, which was found to be due to the rapid degradation of OTS SAM. In contrast to PE-ALD, thermal ALD Co by Co(AMD)2 and H2 produced area selective deposition up to 1000 cycles.