Abstract
In order to understand the growth mechanism for the photoassisted metalorganic vapor phase epitaxy (MOVPE) of ZnSe, effects of photoirradiation on the MOVPE growth of ZnSe using hydrogen selenide (H 2Se) as an alternative Se source to dimethyl selenide (DMSe) have been investigated, and the comparison of the results obtained for both cases has been made. It has been found in the case using H 2Se that photoinduced excess carriers in the ZnSe layer can contribute to the growth rate enhancement as in the case when using DMSe. Considering that there exists a remarkable difference between both cases in the temperature region where the photoirradiation is effective for the growth rate enhancement, it has been concluded that the dissociation of H 2Se molecules is initiated by photocatalysis. This idea is supported by the results of photoluminescence properties of ZnSe films grown by photoassisted MOVPE.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
