Abstract
Optical reflection measurements were performed during metalorganic vapor phase epitaxy (MOVPE) growth of ZnSe at a variety of source supply modes, i.e., simultaneous and alternate supplies of diethylzinc (DEZn) and dimethylselenide (DMSe), and with and without above-bandgap photoirradiation. Reflection change took place at an interval of the DEZn supply in an alternate source supply mode, while it did not at an interval of the DMSe supply. On the other hand, the reflection signal induced by the DEZn supply tended to fall off unless the DMSe supply followed immediately. The observed results suggest that the formation of a precursor in the simultaneous presence of DEZn and DMSe on the surface is responsible for photoassisted growth rate enhancement.
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