Ar ion damage on the surface of soda-lime-silica glass

Abstract

Ar ion sputtering is one of the most accepted techniques for depth profiling in practical X-ray photoelectron spectroscopy (XPS) analysis, while this technique is known to be inadequate for quantitative analysis of glass including mobile ions such as soda-lime-silica glass. In this paper, the profile change in soda-lime-silica glass (70.4SiO2, 0.9Al2O3, 7.3MgO, 7.8CaO, 13.6Na2O in mol%) was investigated on the dependence of the accelerating voltage at 2 and 4 kV for Ar ion sputtering. On the other hand, buckminsterfullerene (C60) ion sputtering has been recently recognized to succeed the precise XPS depth analysis of soda-lime-silica glass without compositional change. Then, the surface states after Ar ion sputtering at 2 and 4 kV were precisely examined with the depth analysis using the C60 ion sputtering. It was firstly confirmed using C60 ion sputtering that the higher accelerating voltage caused the deeper implantation of the Ar ion and the larger migration of mobile ions.